R6020JNZC17 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 61+ | 2.92 EUR |
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Technische Details R6020JNZC17 Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF, Packaging: Bag, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V, Power Dissipation (Max): 76W (Tc), Vgs(th) (Max) @ Id: 7V @ 3.5mA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote R6020JNZC17 nach Preis ab 5.74 EUR bis 7.12 EUR
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R6020JNZC17 | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020JNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Packaging: Bag Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6020JNZC17 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.85 EUR |
| R6020JNZC17 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 10+ | 5.74 EUR |