Technische Details R6020JNZC17 Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF, Power Dissipation (Max): 76W (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Bag, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 7V @ 3.5mA.
Weitere Produktangebote R6020JNZC17 nach Preis ab 5.74 EUR bis 7.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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R6020JNZC17 | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020JNZC17 | ROHM Semiconductor |
MOSFETs 600V 20A TO-3PF, PrestoMOS™ with integrated high-speed diode |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020JNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bag Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 7V @ 3.5mA |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6020JNZC17 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PF Tube
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.7 EUR |
| R6020JNZC17 |
|
Hersteller: ROHM Semiconductor
MOSFETs 600V 20A TO-3PF, PrestoMOS™ with integrated high-speed diode
MOSFETs 600V 20A TO-3PF, PrestoMOS™ with integrated high-speed diode
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.97 EUR |
| 10+ | 6.28 EUR |
| R6020JNZC17 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 10+ | 5.74 EUR |