R6020KNXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 33+ | 6.65 EUR |
| 50+ | 4.89 EUR |
| 100+ | 4.21 EUR |
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Technische Details R6020KNXC7G Rohm Semiconductor
Description: 600V 20A TO-220FM, HIGH-SPEED SW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote R6020KNXC7G nach Preis ab 3.21 EUR bis 9.89 EUR
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R6020KNXC7G | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020KNXC7G | ROHM Semiconductor |
MOSFETs TO220 600V 20A N-CH MOSFET |
auf Bestellung 936 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020KNXC7G | Rohm Semiconductor |
Description: 600V 20A TO-220FM, HIGH-SPEED SW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 759 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6020KNXC7G |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 7.24 EUR |
| 50+ | 4.39 EUR |
| 100+ | 3.77 EUR |
| 500+ | 3.21 EUR |
| R6020KNXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 600V 20A N-CH MOSFET
MOSFETs TO220 600V 20A N-CH MOSFET
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.84 EUR |
| 10+ | 5.11 EUR |
| 100+ | 4.71 EUR |
| 500+ | 4.58 EUR |
| 1000+ | 4.25 EUR |
| 2000+ | 4.05 EUR |
| 5000+ | 3.88 EUR |
| R6020KNXC7G |
|
Hersteller: Rohm Semiconductor
Description: 600V 20A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: 600V 20A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 50+ | 5.18 EUR |
| 100+ | 4.72 EUR |
| 500+ | 3.93 EUR |