R6024ENZ1C9 Rohm Semiconductor
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 6.33 EUR |
| 26+ | 5.84 EUR |
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Technische Details R6024ENZ1C9 Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V.
Weitere Produktangebote R6024ENZ1C9
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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R6024ENZ1C9 | Hersteller : ROHM Semiconductor |
 MOSFET 10V Drive Nch MOSFET |
auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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R6024ENZ1C9 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 600V 24A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
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