R6024ENZ1C9 ROHM Semiconductor

Description: MOSFET N-CH 600V 24A TO247, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.