R6025JNZ4C13 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 26+ | 7.6 EUR |
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26 Stücke
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Technische Details R6025JNZ4C13 Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 7V @ 4.5mA, Supplier Device Package: TO-247G, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V.
Weitere Produktangebote R6025JNZ4C13 nach Preis ab 9.19 EUR bis 19.81 EUR
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R6025JNZ4C13 | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 25A TO247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 7V @ 4.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
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R6025JNZ4C13 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247G Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R6025JNZ4C13 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.81 EUR |
| 30+ | 11.75 EUR |
| 120+ | 9.98 EUR |
| 510+ | 9.19 EUR |
| R6025JNZ4C13 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247G Tube
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247G Tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)