Technische Details R6025JNZ4C13 Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G, Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247G, Vgs(th) (Max) @ Id: 7V @ 4.5mA, Power Dissipation (Max): 306W (Tc).
Weitere Produktangebote R6025JNZ4C13 nach Preis ab 9.19 EUR bis 19.81 EUR
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R6025JNZ4C13 | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 25A TO247GRds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247G Vgs(th) (Max) @ Id: 7V @ 4.5mA Power Dissipation (Max): 306W (Tc) |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
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R6025JNZ4C13 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247G Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R6025JNZ4C13 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247G
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Power Dissipation (Max): 306W (Tc)
Description: MOSFET N-CH 600V 25A TO247G
Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247G
Vgs(th) (Max) @ Id: 7V @ 4.5mA
Power Dissipation (Max): 306W (Tc)
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.81 EUR |
| 30+ | 11.75 EUR |
| 120+ | 9.98 EUR |
| 510+ | 9.19 EUR |
| R6025JNZ4C13 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247G Tube
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247G Tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)