R6030ENZC17 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.05 EUR |
| 32+ | 5.36 EUR |
| 50+ | 4.02 EUR |
| 200+ | 3.55 EUR |
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Technische Details R6030ENZC17 Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.
Weitere Produktangebote R6030ENZC17 nach Preis ab 3.32 EUR bis 7.9 EUR
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R6030ENZC17 | ROHM Semiconductor |
 MOSFETs Transistor MOSFET, Nch 600V 30A 3rd Gen, Low Noise |
auf Bestellung 184 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030ENZC17 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6030ENZC17 |
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Hersteller: ROHM Semiconductor
MOSFETs Transistor MOSFET, Nch 600V 30A 3rd Gen, Low Noise
MOSFETs Transistor MOSFET, Nch 600V 30A 3rd Gen, Low Noise
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 7.19 EUR |
| R6030ENZC17 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.9 EUR |
| 30+ | 6.56 EUR |
| 120+ | 3.32 EUR |
| R6030ENZC17 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 7.9 EUR |
| 25+ | 7.46 EUR |