Technische Details R6030JNZC8 Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF, Packaging: Bulk, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 7V @ 5.5mA, Supplier Device Package: TO-3PF, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V.
Weitere Produktangebote R6030JNZC8 nach Preis ab 12.07 EUR bis 18.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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R6030JNZC8 | Rohm Semiconductor |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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R6030JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 30A TO3PF Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 7V @ 5.5mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030JNZC8 | ROHM Semiconductor |
MOSFET NCH 600V 30A POWER |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
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|
R6030JNZC8 | Rohm Semiconductor |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R6030JNZC8 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 12.07 EUR |
| R6030JNZC8 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.58 EUR |
| 10+ | 12.8 EUR |
| R6030JNZC8 |
|
Hersteller: ROHM Semiconductor
MOSFET NCH 600V 30A POWER
MOSFET NCH 600V 30A POWER
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| R6030JNZC8 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PF Tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)