R6030KNXC7 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 8.71 EUR |
| 10+ | 5.79 EUR |
| 100+ | 4.13 EUR |
| 500+ | 3.43 EUR |
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Technische Details R6030KNXC7 Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote R6030KNXC7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| R6030KNXC7 | Hersteller : Rohm |
N-канальний ПТ, Udss, В = 600, Id = 30 А, Ciss, пФ @ Uds, В = 2350 @ 25, Qg, нКл = 56 @ 10 В, Rds = 130 мОм @ 14,5 A, 10 В, Ugs(th) = 5 В @ 1000 мкА, Р, Вт = 86, Тексп, °C = -55...+150, Тип монт. = вивідний,... Група товару: Транзистори Корпус: TO-220FM О Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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R6030KNXC7 | Hersteller : ROHM Semiconductor |
MOSFETs Nch 600V 30A TO-220FM Pwr MOSFET |
Produkt ist nicht verfügbar |