R6030KNXC7 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 44+ | 4 EUR |
| 50+ | 3.78 EUR |
| 100+ | 3.58 EUR |
| 250+ | 3.39 EUR |
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Technische Details R6030KNXC7 Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote R6030KNXC7 nach Preis ab 4.22 EUR bis 10.72 EUR
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R6030KNXC7 | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 30A TO220FMInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6030KNXC7 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.72 EUR |
| 10+ | 7.13 EUR |
| 50+ | 5.59 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.22 EUR |