R6030KNXC7 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 44+ | 4.13 EUR |
| 50+ | 3.92 EUR |
| 100+ | 3.7 EUR |
| 250+ | 3.51 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
44 Stücke
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Technische Details R6030KNXC7 Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V.
Weitere Produktangebote R6030KNXC7 nach Preis ab 4.22 EUR bis 10.72 EUR
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R6030KNXC7 | Rohm Semiconductor |
 Description: MOSFET N-CH 600V 30A TO220FMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6030KNXC7 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.72 EUR |
| 10+ | 7.13 EUR |
| 50+ | 5.59 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.22 EUR |