Technische Details R6030KNXC7G Rohm Semiconductor
Description: ROHM - R6030KNXC7G - Leistungs-MOSFET, n-Kanal, 600 V, 30 A, 0.115 ohm, TO-220FM, Durchsteckmontage, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600, Dauer-Drainstrom Id: 30, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 86, Gate-Source-Schwellenspannung, max.: 5, Verlustleistung: 86, Bauform - Transistor: TO-220FM, Anzahl der Pins: 3, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.115, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.115, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote R6030KNXC7G nach Preis ab 2.65 EUR bis 11.13 EUR
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R6030KNXC7G | Rohm Semiconductor |
 Description: 600V 30A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
auf Bestellung 827 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030KNXC7G | ROHM Semiconductor |
MOSFETs TO220 600V 30A N-CH MOSFET |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6030KNXC7G |
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Hersteller: Rohm Semiconductor
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.03 EUR |
| 50+ | 3.57 EUR |
| 100+ | 3.24 EUR |
| 500+ | 2.65 EUR |
| R6030KNXC7G |
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Hersteller: ROHM Semiconductor
MOSFETs TO220 600V 30A N-CH MOSFET
MOSFETs TO220 600V 30A N-CH MOSFET
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.13 EUR |
| 10+ | 7.12 EUR |
| 100+ | 6.51 EUR |
| 500+ | 5.46 EUR |