Technische Details R6030KNZC17 ROHM Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc).
Weitere Produktangebote R6030KNZC17 nach Preis ab 7.14 EUR bis 14.48 EUR
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R6030KNZC17 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 600V 30A TO3PFFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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