R6049YNZ4C13 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching.
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Technische Details R6049YNZ4C13 ROHM Semiconductor
Description: NCH 600V 49A, TO-247G, POWER MOS, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V, Power Dissipation (Max): 448W (Tc), Vgs(th) (Max) @ Id: 6V @ 2.9mA, Supplier Device Package: TO-247G, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V.
Weitere Produktangebote R6049YNZ4C13 nach Preis ab 5.47 EUR bis 13.04 EUR
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R6049YNZ4C13 | Hersteller : Rohm Semiconductor |
Description: NCH 600V 49A, TO-247G, POWER MOS Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V Power Dissipation (Max): 448W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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