R6504ENXC7G Rohm Semiconductor

Description: 650V 4A TO-220FM, LOW-NOISE POWE, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 4V @ 130µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.