R6511ENXC7G ROHM Semiconductor
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.21 EUR |
| 10+ | 3.8 EUR |
| 25+ | 3.57 EUR |
| 100+ | 3.04 EUR |
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Technische Details R6511ENXC7G ROHM Semiconductor
Description: 650V 11A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 4V @ 320µA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote R6511ENXC7G nach Preis ab 3.49 EUR bis 5.14 EUR
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R6511ENXC7G | Hersteller : Rohm Semiconductor |
 Description: 650V 11A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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