R6515ENJTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.12 EUR |
| 50+ | 5.37 EUR |
| 100+ | 4.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details R6515ENJTL Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS, Vgs(th) (Max) @ Id: 4V @ 430µA, Power Dissipation (Max): 184W (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS.
Weitere Produktangebote R6515ENJTL nach Preis ab 5.09 EUR bis 12.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6515ENJTL | Rohm Semiconductor |
Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
R6515ENJTL | ROHM Semiconductor |
MOSFET Nch 650V 15A Power MOSFET. R6515ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. |
auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
R6515ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 15A LPTSInput Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 4V @ 430µA Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6515ENJTL |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) LPTS T/R
Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) LPTS T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 7.15 EUR |
| 100+ | 5.09 EUR |
| R6515ENJTL |
![]() |
Hersteller: ROHM Semiconductor
MOSFET Nch 650V 15A Power MOSFET. R6515ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
MOSFET Nch 650V 15A Power MOSFET. R6515ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.81 EUR |
| 10+ | 9.72 EUR |
| 100+ | 7.98 EUR |
| 500+ | 6.91 EUR |
| 1000+ | 5.74 EUR |
| 2000+ | 5.43 EUR |
| 10000+ | 5.34 EUR |
| R6515ENJTL |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 15A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 430µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.48 EUR |
| 10+ | 8.38 EUR |
| 100+ | 6.06 EUR |



