Technische Details R6515ENXC7G Rohm Semiconductor
Description: 650V 15A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 430µA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.
Weitere Produktangebote R6515ENXC7G nach Preis ab 3.34 EUR bis 9.09 EUR
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R6515ENXC7G | Rohm Semiconductor |
 Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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R6515ENXC7G | ROHM Semiconductor |
MOSFETs TO220 650V 15A N-CH MOSFET |
auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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R6515ENXC7G | Rohm Semiconductor |
Description: 650V 15A TO-220FM, LOW-NOISE POW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 430µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6515ENXC7G |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 7.43 EUR |
| 50+ | 3.94 EUR |
| 100+ | 3.56 EUR |
| R6515ENXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 15A N-CH MOSFET
MOSFETs TO220 650V 15A N-CH MOSFET
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.46 EUR |
| 10+ | 7.85 EUR |
| 50+ | 4.44 EUR |
| 100+ | 4.19 EUR |
| 250+ | 4.16 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.56 EUR |
| R6515ENXC7G |
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Hersteller: Rohm Semiconductor
Description: 650V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: 650V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.09 EUR |
| 50+ | 4.72 EUR |
| 100+ | 4.34 EUR |
| 500+ | 3.59 EUR |
| 1000+ | 3.34 EUR |