Technische Details R6515KNXC7G Rohm Semiconductor
Description: 650V 15A TO-220FM, HIGH-SPEED SW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 430µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote R6515KNXC7G nach Preis ab 3.2 EUR bis 4.66 EUR
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R6515KNXC7G | ROHM Semiconductor |
 MOSFETs TO220 650V 15A N-CH MOSFET |
auf Bestellung 3953 Stücke: Lieferzeit 10-14 Tag (e) |
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R6515KNXC7G | Rohm Semiconductor |
Description: 650V 15A TO-220FM, HIGH-SPEED SW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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R6515KNXC7G | Rohm Semiconductor |
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| R6515KNXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 15A N-CH MOSFET
MOSFETs TO220 650V 15A N-CH MOSFET
auf Bestellung 3953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 3.33 EUR |
| R6515KNXC7G |
|
Hersteller: Rohm Semiconductor
Description: 650V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: 650V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.66 EUR |
| 50+ | 3.31 EUR |
| 100+ | 3.3 EUR |
| 500+ | 3.2 EUR |
| R6515KNXC7G |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)