R6515KNZC17 Rohm Semiconductor

Description: MOSFET N-CH 650V 15A TO3, Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 430µA, Power Dissipation (Max): 60W (Tc).