R6520ENXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.68 EUR |
| 57+ | 3.05 EUR |
| 100+ | 2.83 EUR |
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Technische Details R6520ENXC7G Rohm Semiconductor
Description: 650V 20A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 630µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote R6520ENXC7G nach Preis ab 4.24 EUR bis 10.16 EUR
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R6520ENXC7G | Rohm Semiconductor |
 Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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R6520ENXC7G | ROHM Semiconductor |
MOSFETs TO220 650V 20A N-CH MOSFET |
auf Bestellung 710 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520ENXC7G | Rohm Semiconductor |
Description: 650V 20A TO-220FM, LOW-NOISE POW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 630µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 954 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6520ENXC7G |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-220FM Tube
Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-220FM Tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 4.83 EUR |
| 50+ | 4.58 EUR |
| 100+ | 4.33 EUR |
| R6520ENXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 20A N-CH MOSFET
MOSFETs TO220 650V 20A N-CH MOSFET
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.01 EUR |
| 10+ | 5.51 EUR |
| 100+ | 5.07 EUR |
| 500+ | 4.24 EUR |
| R6520ENXC7G |
|
Hersteller: Rohm Semiconductor
Description: 650V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: 650V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.16 EUR |
| 50+ | 5.99 EUR |
| 100+ | 5.71 EUR |
| 500+ | 4.77 EUR |