R6520KNJTL Rohm Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 4.62 EUR |
| 50+ | 4.29 EUR |
| 100+ | 3.99 EUR |
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Technische Details R6520KNJTL Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 5V @ 630µA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote R6520KNJTL nach Preis ab 5.30 EUR bis 10.20 EUR
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R6520KNJTL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 650V 20A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 630µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520KNJTL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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R6520KNJTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 650V 20A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 630µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6520KNJTL | Hersteller : ROHM Semiconductor |
MOSFET Nch 650V 20A Power MOSFET. R6520KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. |
Produkt ist nicht verfügbar |