R6520KNJTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.44 EUR |
| 50+ | 5.15 EUR |
| 100+ | 4.87 EUR |
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Technische Details R6520KNJTL Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 5V @ 630µA, Power Dissipation (Max): 231W (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote R6520KNJTL nach Preis ab 6.47 EUR bis 12.01 EUR
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R6520KNJTL | Rohm Semiconductor |
 Description: MOSFET N-CH 650V 20A LPTSPackage / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 630µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520KNJTL | Rohm Semiconductor |
Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6520KNJTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 20A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 650V 20A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.85 EUR |
| 10+ | 9.96 EUR |
| R6520KNJTL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) LPTS T/R
Trans MOSFET N-CH 650V 20A 3-Pin(2+Tab) LPTS T/R
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 12.01 EUR |
| 22+ | 8 EUR |
| 50+ | 6.47 EUR |