R6520KNXC7G Rohm Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 2.31 EUR |
| 70+ | 2.05 EUR |
| 100+ | 1.92 EUR |
| 200+ | 1.83 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.56 EUR |
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Technische Details R6520KNXC7G Rohm Semiconductor
Description: 650V 20A TO-220FM, HIGH-SPEED SW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 5V @ 630µA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote R6520KNXC7G nach Preis ab 3.59 EUR bis 7.78 EUR
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R6520KNXC7G | Hersteller : ROHM Semiconductor |
 MOSFETs TO220 650V 20A N-CH MOSFET |
auf Bestellung 1815 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520KNXC7G | Hersteller : Rohm Semiconductor |
Description: 650V 20A TO-220FM, HIGH-SPEED SW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 630µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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