R6520KNXC7G Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 64+ | 2.69 EUR |
| 70+ | 2.44 EUR |
| 100+ | 2.32 EUR |
| 200+ | 2.25 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 2.02 EUR |
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Technische Details R6520KNXC7G Rohm Semiconductor
Description: 650V 20A TO-220FM, HIGH-SPEED SW, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FM, Vgs(th) (Max) @ Id: 5V @ 630µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V.
Weitere Produktangebote R6520KNXC7G nach Preis ab 3.88 EUR bis 10.72 EUR
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R6520KNXC7G | ROHM Semiconductor |
 MOSFETs TO220 650V 20A N-CH MOSFET |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520KNXC7G | Rohm Semiconductor |
Description: 650V 20A TO-220FM, HIGH-SPEED SW Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 630µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
auf Bestellung 928 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R6520KNXC7G |
|
Hersteller: ROHM Semiconductor
MOSFETs TO220 650V 20A N-CH MOSFET
MOSFETs TO220 650V 20A N-CH MOSFET
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.36 EUR |
| 10+ | 5.53 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.19 EUR |
| 2000+ | 4.05 EUR |
| 5000+ | 3.88 EUR |
| R6520KNXC7G |
|
Hersteller: Rohm Semiconductor
Description: 650V 20A TO-220FM, HIGH-SPEED SW
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: 650V 20A TO-220FM, HIGH-SPEED SW
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 630µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.72 EUR |
| 10+ | 7.15 EUR |
| 50+ | 5.62 EUR |
| 100+ | 5.12 EUR |
| 500+ | 4.26 EUR |