R6524ENZ4C13 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 650V 24A TO-247, LOW-NOISE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 750µA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.36 EUR |
| 30+ | 7.42 EUR |
| 120+ | 6.36 EUR |
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Technische Details R6524ENZ4C13 Rohm Semiconductor
Description: 650V 24A TO-247, LOW-NOISE POWER, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4V @ 750µA, Supplier Device Package: TO-247G, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V.
Weitere Produktangebote R6524ENZ4C13 nach Preis ab 4.75 EUR bis 9.49 EUR
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R6524ENZ4C13 | Hersteller : ROHM Semiconductor |
MOSFET 650V 24A TO-247, Low-noise Power MOSFET |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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