R6524KNZC17 Rohm Semiconductor
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 7.94 EUR |
| 25+ | 7.32 EUR |
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Technische Details R6524KNZC17 Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V.
Weitere Produktangebote R6524KNZC17 nach Preis ab 4.98 EUR bis 11.49 EUR
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R6524KNZC17 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-3PF Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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R6524KNZC17 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 650V 24A TO3 Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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R6524KNZC17 | Hersteller : ROHM Semiconductor |
MOSFETs 650V 24A TO-3PF, High-speed switching Power MOSFET |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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