R6524KNZC17 ROHM Semiconductor
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.03 EUR |
| 10+ | 8.43 EUR |
| 25+ | 8.17 EUR |
| 100+ | 6.81 EUR |
| 300+ | 6.6 EUR |
| 600+ | 6.05 EUR |
| 1200+ | 4.88 EUR |
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Technische Details R6524KNZC17 ROHM Semiconductor
Description: MOSFET N-CH 650V 24A TO3, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V.
Weitere Produktangebote R6524KNZC17 nach Preis ab 8.26 EUR bis 11.21 EUR
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R6524KNZC17 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 650V 24A TO3Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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