Technische Details R6530ENZC17 ROHM Semiconductor
Description: MOSFET N-CH 650V 30A TO3, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 4V @ 960µA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Weitere Produktangebote R6530ENZC17 nach Preis ab 5.99 EUR bis 7.47 EUR
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R6530ENZC17 | Rohm Semiconductor |
 Description: MOSFET N-CH 650V 30A TO3Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 960µA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6530ENZC17 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 30A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 960µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.47 EUR |
| 30+ | 6.13 EUR |
| 120+ | 5.99 EUR |