R8006KND3TL1 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 37+ | 4.77 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 3.02 EUR |
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Technische Details R8006KND3TL1 Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V.
Weitere Produktangebote R8006KND3TL1 nach Preis ab 3.2 EUR bis 8.54 EUR
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R8006KND3TL1 | Rohm Semiconductor |
 Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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R8006KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 6A Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
auf Bestellung 788 Stücke: Lieferzeit 10-14 Tag (e) |
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R8006KND3TL1 | ROHM Semiconductor |
MOSFETs TO252 800V 6A N-CH MOSFET |
auf Bestellung 1402 Stücke: Lieferzeit 10-14 Tag (e) |
|
| R8006KND3TL1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.26 EUR |
| 50+ | 4.7 EUR |
| R8006KND3TL1 |
|
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.88 EUR |
| 10+ | 5.19 EUR |
| 100+ | 3.68 EUR |
| 500+ | 3.38 EUR |
| R8006KND3TL1 |
|
Hersteller: ROHM Semiconductor
MOSFETs TO252 800V 6A N-CH MOSFET
MOSFETs TO252 800V 6A N-CH MOSFET
auf Bestellung 1402 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.54 EUR |
| 10+ | 5.63 EUR |
| 100+ | 3.97 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 3.42 EUR |
| 2500+ | 3.2 EUR |