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RABS15MH

RABS15MH Taiwan Semiconductor Corporation

RABS15M_D2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
2000+0.25 EUR
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Technische Details RABS15MH Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1P 1KV 1.5A ABS-L, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Gull Wing, Mounting Type: Surface Mount, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: ABS-L, Grade: Automotive, Part Status: Active, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 1.5 A, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Qualification: AEC-Q101.

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RABS15MH RABS15MH Hersteller : Taiwan Semiconductor Corporation RABS15M_D2103.pdf Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS-L
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
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RABS15MH RABS15MH Hersteller : Taiwan Semiconductor RABS15M_D2103.pdf Rectifiers 500ns, 1.5A, 1000V, Fast Recovery Bridge Rectifier
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