RABS20M Diodes Incorporated

Description: BRIDGE RECT 1PHASE 1KV 2A 4-SOPA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOPA (Type WX)
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 228000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.12 EUR |
9000+ | 0.11 EUR |
75000+ | 0.10 EUR |
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Technische Details RABS20M Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2A 4-SOPA, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Gull Wing, Mounting Type: Surface Mount, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: 4-SOPA (Type WX), Part Status: Active, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Weitere Produktangebote RABS20M nach Preis ab 0.12 EUR bis 0.64 EUR
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RABS20M | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOPA (Type WX) Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 230258 Stücke: Lieferzeit 10-14 Tag (e) |
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RABS20M | Hersteller : TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Max. off-state voltage: 1kV Max. forward voltage: 1.16V Load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: ABS Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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RABS20M | Hersteller : TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Max. off-state voltage: 1kV Max. forward voltage: 1.16V Load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: ABS |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RABS20M | Hersteller : Diodes Incorporated |
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auf Bestellung 7725 Stücke: Lieferzeit 10-14 Tag (e) |
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RABS20M | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RABS20M | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RABS20M | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |