RAL045P01TCR Rohm Semiconductor

Description: MOSFET P-CH 12V 4.5A TUMT6, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).