RB061QS-20T18R ROHM Semiconductor
auf Bestellung 9357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.30 EUR |
| 2500+ | 0.28 EUR |
| 10000+ | 0.26 EUR |
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Technische Details RB061QS-20T18R ROHM Semiconductor
Description: DIODE GEN PURP 20V 2A SMD1006, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, No Lead, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: SMD1006, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A, Current - Reverse Leakage @ Vr: 200 µA @ 10 V.
Weitere Produktangebote RB061QS-20T18R nach Preis ab 0.13 EUR bis 1.28 EUR
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RB061QS-20T18R | Hersteller : Rohm Semiconductor |
 Description: DIODE GEN PURP 20V 2A SMD1006Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMD1006 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 10 V |
auf Bestellung 10633 Stücke: Lieferzeit 10-14 Tag (e) |
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| RB061QS-20T18R | Hersteller : ROHM SEMICONDUCTOR |
RB061QS-20T18R SMD Schottky diodes |
auf Bestellung 11495 Stücke: Lieferzeit 7-14 Tag (e) |
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RB061QS-20T18R | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 20V 2A SMD1006 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMD1006 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 10 V |
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