RB080AR-40T7R ROHM Semiconductor
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers Schottky Barrier Diode RASMID™ Series, Low VF, 40V, 4A, SMD2012
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.51 EUR |
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Technische Details RB080AR-40T7R ROHM Semiconductor
Description: DIODE SCHOTTKY 40V 4A DSN20122, Packaging: Tape & Reel (TR), Package / Case: 0805 (2012 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Schottky, Capacitance @ Vr, F: 110pF @ 10V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DSN2012-2, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A, Current - Reverse Leakage @ Vr: 200 µA @ 40 V.
Weitere Produktangebote RB080AR-40T7R nach Preis ab 0.52 EUR bis 1.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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RB080AR-40T7R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 4A DSN20122 Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Capacitance @ Vr, F: 110pF @ 10V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DSN2012-2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
auf Bestellung 4345 Stücke: Lieferzeit 10-14 Tag (e) |
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| RB080AR-40T7R |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 4A DSN20122
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DSN2012-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 4A DSN20122
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DSN2012-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 4345 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.55 EUR |
| 2000+ | 0.52 EUR |