RB088BGE100TL ROHM Semiconductor
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.39 EUR |
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Technische Details RB088BGE100TL ROHM Semiconductor
Description: DIODE ARR SCHOTT 100V 5A TO252GE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 5A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote RB088BGE100TL nach Preis ab 1.46 EUR bis 4.08 EUR
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RB088BGE100TL | Hersteller : Rohm Semiconductor |
 Description: DIODE ARR SCHOTT 100V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 1220 Stücke: Lieferzeit 10-14 Tag (e) |
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RB088BGE100TL | Hersteller : Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 5A TO252GE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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