RB088BM200FHTL ROHM Semiconductor
auf Bestellung 4567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.37 EUR |
| 2500+ | 1.36 EUR |
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Technische Details RB088BM200FHTL ROHM Semiconductor
Description: DIODE ARR SCHOTT 200V 10A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-252, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A, Current - Reverse Leakage @ Vr: 7 µA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote RB088BM200FHTL nach Preis ab 2.03 EUR bis 3.06 EUR
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RB088BM200FHTL | Hersteller : Rohm Semiconductor |
 Description: DIODE ARR SCHOTT 200V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| RB088BM200FHTL | Hersteller : ROHM SEMICONDUCTOR |
RB088BM200FHTL SMD Schottky diodes |
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RB088BM200FHTL | Hersteller : Rohm Semiconductor |
Description: DIODE ARR SCHOTT 200V 10A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |