RB088T-60NZC9 ROHM Semiconductor
Hersteller: ROHM SemiconductorSchottky Diodes & Rectifiers RB088T-60NZ is super low IR schottky barrier diode for switching power supply.
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.50 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.76 EUR |
| 5000+ | 0.72 EUR |
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Technische Details RB088T-60NZC9 ROHM Semiconductor
Description: RB088T-60NZ IS SUPER LOW IR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220FN, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A, Current - Reverse Leakage @ Vr: 3 µA @ 60 V.
Weitere Produktangebote RB088T-60NZC9 nach Preis ab 1.09 EUR bis 1.90 EUR
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RB088T-60NZC9 | Hersteller : Rohm Semiconductor |
Description: RB088T-60NZ IS SUPER LOW IR Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 60 V |
auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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