RB095BGE-90TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: DIODE ARRAY SCHOTT 90V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.78 EUR |
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Technische Details RB095BGE-90TL Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 6A, Supplier Device Package: TO-252, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 90 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A, Current - Reverse Leakage @ Vr: 150 µA @ 90 V.
Weitere Produktangebote RB095BGE-90TL nach Preis ab 0.57 EUR bis 1.46 EUR
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RB095BGE-90TL | Hersteller : ROHM Semiconductor |
Schottky Diodes & Rectifiers 90V Vr; 6A Io TO-252 SBD |
auf Bestellung 1016 Stücke: Lieferzeit 10-14 Tag (e) |
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RB095BGE-90TL | Hersteller : Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 90 V |
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