
RB215T-60HZC9 ROHM Semiconductor

Schottky Diodes & Rectifiers Schottky Barrier Diode (AEC-Q101 Qualified)
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 5.44 EUR |
10+ | 2.71 EUR |
100+ | 2.62 EUR |
500+ | 2.15 EUR |
1000+ | 2.11 EUR |
2000+ | 1.95 EUR |
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Technische Details RB215T-60HZC9 ROHM Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220FN, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A, Current - Reverse Leakage @ Vr: 600 µA @ 60 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RB215T-60HZC9 nach Preis ab 2.27 EUR bis 5.77 EUR
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RB215T-60HZC9 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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