RB218NS-30TL Rohm Semiconductor
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 92+ | 1.7 EUR |
| 100+ | 1.57 EUR |
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Technische Details RB218NS-30TL Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 20A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: LPDS, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 30 V.
Weitere Produktangebote RB218NS-30TL nach Preis ab 1.06 EUR bis 2.48 EUR
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RB218NS-30TL | Hersteller : ROHM Semiconductor |
 Schottky Diodes & Rectifiers RB218NS-30TL is super low IR<-sub> Schottkey Barrier Diode for switching power supply. |
auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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RB218NS-30TL | Hersteller : Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 20A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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RB218NS-30TL | Hersteller : Rohm Semiconductor |
Diode Schottky Si 35V 20A 3-Pin(2+Tab) LPDS T/R |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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RB218NS-30TL | Hersteller : Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 30V 20A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
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