RBA175N08EANS-4UA02#HB0 Renesas Electronics Corporation

Description: POWER:POWER MOSFETS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 88A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 4V @ 109µA, Supplier Device Package: 8-DFN (4.9x5.75), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V, Qualification: AEC-Q101.