RBA250N04AHPF-4UA01#GB0 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: POWER TRS2 AUTOMOTIVE MOS MP-25L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 125A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 368 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.36 EUR |
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Technische Details RBA250N04AHPF-4UA01#GB0 Renesas Electronics Corporation
Description: POWER TRS2 AUTOMOTIVE MOS MP-25L, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 125A, 10V, Power Dissipation (Max): 1.8W (Ta), 348W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 368 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19350 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote RBA250N04AHPF-4UA01#GB0 nach Preis ab 6.03 EUR bis 8.89 EUR
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RBA250N04AHPF-4UA01#GB0 | Hersteller : Renesas Electronics Corporation |
Description: POWER TRS2 AUTOMOTIVE MOS MP-25L Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 125A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 368 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19350 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2447 Stücke: Lieferzeit 10-14 Tag (e) |
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RBA250N04AHPF-4UA01#GB0 | Hersteller : Renesas Electronics |
MOSFET POWER TRS2 AUTOMOTIVE MOS MP-25LZU |
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