RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MP-25LZU
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation
Description: MP-25LZU, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V, Power Dissipation (Max): 1.8W (Ta), 348W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RBA250N10CHPF-4UA02#GB0 nach Preis ab 5.26 EUR bis 12.42 EUR
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RBA250N10CHPF-4UA02#GB0 | Renesas Electronics |
MOSFETs Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7 |
auf Bestellung 569 Stücke: Lieferzeit 10-14 Tag (e) |
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RBA250N10CHPF-4UA02#GB0 | Renesas Electronics Corporation |
Description: MP-25LZU Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RBA250N10CHPF-4UA02#GB0 |
|
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7
MOSFETs Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.42 EUR |
| 10+ | 8.38 EUR |
| 100+ | 6.22 EUR |
| 800+ | 5.26 EUR |
| RBA250N10CHPF-4UA02#GB0 |
|
Hersteller: Renesas Electronics Corporation
Description: MP-25LZU
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MP-25LZU
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)