RBA250N10CHPF-4UA02#GB0 Renesas Electronics
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.84 EUR |
| 10+ | 8.27 EUR |
| 25+ | 8.03 EUR |
| 100+ | 6.67 EUR |
| 250+ | 6.49 EUR |
| 500+ | 6.28 EUR |
| 800+ | 4.79 EUR |
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Technische Details RBA250N10CHPF-4UA02#GB0 Renesas Electronics
Description: MP-25LZU, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V, Power Dissipation (Max): 1.8W (Ta), 348W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RBA250N10CHPF-4UA02#GB0 nach Preis ab 6.29 EUR bis 10.24 EUR
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RBA250N10CHPF-4UA02#GB0 | Hersteller : Renesas Electronics Corporation |
 Description: MP-25LZUPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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RBA250N10CHPF-4UA02#GB0 | Hersteller : Renesas Electronics Corporation |
Description: MP-25LZU Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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