RBE011N08R1SZPW#KB0 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: POWER:POWER MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 100A, 10V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 40 V
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Technische Details RBE011N08R1SZPW#KB0 Renesas Electronics Corporation
Description: POWER:POWER MOSFETS, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 1.06mOhm @ 100A, 10V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TOLT, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 40 V.
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RBE011N08R1SZPW#KB0 | Hersteller : Renesas Electronics |
MOSFETs Ind. MOS REXFET-1 80V 1.06mohm TOLT |
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