RBE034N15R1SZPW#KB0 Renesas Electronics
| Anzahl | Preis |
|---|---|
| 1+ | 13.31 EUR |
| 10+ | 9.68 EUR |
| 100+ | 8.06 EUR |
| 500+ | 7.2 EUR |
| 1300+ | 6.41 EUR |
| 2600+ | 6.39 EUR |
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Technische Details RBE034N15R1SZPW#KB0 Renesas Electronics
Description: MOSFET N-CH 150V 200A TOLT, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 366W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TOLT, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V.
Weitere Produktangebote RBE034N15R1SZPW#KB0 nach Preis ab 5.8 EUR bis 14.06 EUR
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| RBE034N15R1SZPW#KB0 | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 150V 200A TOLTPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 366W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TOLT Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V |
auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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| RBE034N15R1SZPW#KB0 | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 150V 200A TOLT Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 366W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TOLT Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V |
auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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