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RBN25H125S1FPQ-A0#CB0

RBN25H125S1FPQ-A0#CB0 Renesas Electronics

r07ds1378ej0141_rbn25h125s1fpqa0-2930990.pdf
Hersteller: Renesas Electronics
IGBT Transistors IGBT-G8H 1250V/25A built-in FRD TO247A
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250+9.26 EUR
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Technische Details RBN25H125S1FPQ-A0#CB0 Renesas Electronics

Description: IGBT TRENCH 1250V 50A TO-247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 102 ns, Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 19ns/109ns, Switching Energy: 1.1mJ (on), 800µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 56 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Power - Max: 223 W.

Weitere Produktangebote RBN25H125S1FPQ-A0#CB0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RBN25H125S1FPQ-A0#CB0 RBN25H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn25h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 50A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RBN25H125S1FPQ-A0#CB0 rbn25h125s1fpq-a0-datasheet-0
RBN25H125S1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 50A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH