RBN40H65T1FPQ-A0#CB0 Renesas Electronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.44 EUR |
| 10+ | 11.73 EUR |
| 25+ | 9.95 EUR |
| 100+ | 9.17 EUR |
| 250+ | 7.64 EUR |
| 500+ | 6.39 EUR |
| 1000+ | 6.34 EUR |
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Technische Details RBN40H65T1FPQ-A0#CB0 Renesas Electronics
Description: IGBT TRENCH 650V 80A TO-247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 22ns/96ns, Switching Energy: 620µJ (on), 520µJ (off), Test Condition: 400V, 40A, 16Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 185 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
RBN40H65T1FPQ-A0#CB0 | Renesas Electronics Corporation |
Description: IGBT TRENCH 650V 80A TO-247APackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 22ns/96ns Switching Energy: 620µJ (on), 520µJ (off) Test Condition: 400V, 40A, 16Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 185 W |
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| RBN40H65T1FPQ-A0#CB0 |
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Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 80A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
Description: IGBT TRENCH 650V 80A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



