
RBR20BGE30ATL Rohm Semiconductor

Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 3.59 EUR |
10+ | 3.22 EUR |
100+ | 2.59 EUR |
500+ | 2.12 EUR |
1000+ | 1.77 EUR |
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Technische Details RBR20BGE30ATL Rohm Semiconductor
Description: 30V, 20A, TO-252, CATHODE COMMON, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A, Current - Reverse Leakage @ Vr: 300 µA @ 30 V.
Weitere Produktangebote RBR20BGE30ATL nach Preis ab 1.56 EUR bis 4.54 EUR
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RBR20BGE30ATL | Hersteller : ROHM Semiconductor |
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auf Bestellung 1341 Stücke: Lieferzeit 10-14 Tag (e) |
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RBR20BGE30ATL | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
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