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RCJ120N25TL

RCJ120N25TL Rohm Semiconductor

datasheet?p=RCJ120N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
11+1.61 EUR
100+1.13 EUR
500+0.92 EUR
Mindestbestellmenge: 8
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Technische Details RCJ120N25TL Rohm Semiconductor

Description: MOSFET N-CH 250V 12A LPT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V, Power Dissipation (Max): 1.56W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.

Weitere Produktangebote RCJ120N25TL nach Preis ab 1.43 EUR bis 3.22 EUR

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RCJ120N25TL RCJ120N25TL Hersteller : ROHM Semiconductor datasheet?p=RCJ120N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 10V Drive Nch MOSFET
auf Bestellung 919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.22 EUR
10+2.90 EUR
100+2.34 EUR
500+1.92 EUR
1000+1.58 EUR
2000+1.47 EUR
5000+1.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RCJ120N25TL RCJ120N25TL Hersteller : Rohm Semiconductor datasheet?p=RCJ120N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 12A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH