auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.45 EUR |
| 10+ | 3.29 EUR |
| 100+ | 2.64 EUR |
| 250+ | 2.34 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.95 EUR |
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Technische Details RCJ200N20TL ROHM Semiconductor
Description: MOSFET N-CH 200V 20A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V, Power Dissipation (Max): 1.56W (Ta), 106W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote RCJ200N20TL nach Preis ab 2.21 EUR bis 5.74 EUR
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RCJ200N20TL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 20A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V Power Dissipation (Max): 1.56W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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| RCJ200N20TL | Hersteller : ROHM SEMICONDUCTOR |
RCJ200N20TL SMD N channel transistors |
Produkt ist nicht verfügbar |
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RCJ200N20TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 200V 20A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V Power Dissipation (Max): 1.56W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |