RCJ451N20TL Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 38+ | 4.56 EUR |
| 50+ | 4.1 EUR |
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Technische Details RCJ451N20TL Rohm Semiconductor
Description: 200V 45A, NCH, TO-263S, POWER MO, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263S, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 1.56W (Ta), 211W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote RCJ451N20TL nach Preis ab 2.46 EUR bis 6.88 EUR
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RCJ451N20TL | ROHM Semiconductor |
 MOSFETs 200V 45A, Nch, TO-263S, Power MOSFET |
auf Bestellung 1908 Stücke: Lieferzeit 10-14 Tag (e) |
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| RCJ451N20TL | Rohm Semiconductor |
Description: 200V 45A, NCH, TO-263S, POWER MO Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263S Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 1.56W (Ta), 211W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| RCJ451N20TL |
|
Hersteller: ROHM Semiconductor
MOSFETs 200V 45A, Nch, TO-263S, Power MOSFET
MOSFETs 200V 45A, Nch, TO-263S, Power MOSFET
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.41 EUR |
| 10+ | 4.08 EUR |
| 100+ | 3.15 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.55 EUR |
| 2000+ | 2.46 EUR |
| RCJ451N20TL |
|
Hersteller: Rohm Semiconductor
Description: 200V 45A, NCH, TO-263S, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: 200V 45A, NCH, TO-263S, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.88 EUR |
| 10+ | 5.78 EUR |
| 100+ | 4.68 EUR |
| 500+ | 4.16 EUR |