| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.06 EUR |
| 10+ | 9.92 EUR |
| 100+ | 8.15 EUR |
| 500+ | 6.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RCJ700N20TL ROHM Semiconductor
Description: MOSFET N-CH 200V 70A LPTS, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 1.56W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc).
Weitere Produktangebote RCJ700N20TL nach Preis ab 5.08 EUR bis 11.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RCJ700N20TL | Rohm Semiconductor |
 Description: MOSFET N-CH 200V 70A LPTSPackage / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 926 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RCJ700N20TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 70A LPTS
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.96 EUR |
| 10+ | 8.08 EUR |
| 25+ | 7.08 EUR |
| 100+ | 5.96 EUR |
| 250+ | 5.41 EUR |
| 500+ | 5.08 EUR |