RCX220N25 Rohm Semiconductor
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 2.23 EUR |
| 100+ | 2.05 EUR |
| 250+ | 1.9 EUR |
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Technische Details RCX220N25 Rohm Semiconductor
Description: MOSFET N-CH 250V 22A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.
Weitere Produktangebote RCX220N25 nach Preis ab 1.55 EUR bis 3.56 EUR
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RCX220N25 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 250V 22A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 528 Stücke: Lieferzeit 10-14 Tag (e) |
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RCX220N25 | Hersteller : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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RCX220N25 Produktcode: 199673 |
Transistoren > MOSFET N-CH |
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| RCX220N25 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 61W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RCX220N25 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 61W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |