auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 2.50 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.35 EUR |
| 5000+ | 1.31 EUR |
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Technische Details RCX300N20 ROHM Semiconductor
Description: MOSFET N-CH 200V 30A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.
Weitere Produktangebote RCX300N20 nach Preis ab 2.00 EUR bis 3.01 EUR
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RCX300N20 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 30A TO220FMPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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| RCX300N20 | Hersteller : ROHM SEMICONDUCTOR |
RCX300N20 THT N channel transistors |
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