RD3P02BATTL1 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs RD3P02BAT is a low on-resistance power MOSFET suitable for switching applications.
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.08 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.31 EUR |
| 2500+ | 1.17 EUR |
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Technische Details RD3P02BATTL1 ROHM Semiconductor
Description: PCH -100V -20A POWER MOSFET: RD3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 116mOhm @ 10A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Weitere Produktangebote RD3P02BATTL1 nach Preis ab 1.32 EUR bis 4.14 EUR
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RD3P02BATTL1 | Rohm Semiconductor |
Description: PCH -100V -20A POWER MOSFET: RD3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 10A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 1130 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3P02BATTL1 | Rohm Semiconductor |
Trans MOSFET P-CH 100V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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| RD3P02BATTL1 |
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Hersteller: Rohm Semiconductor
Description: PCH -100V -20A POWER MOSFET: RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Description: PCH -100V -20A POWER MOSFET: RD3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 1130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.14 EUR |
| 10+ | 2.65 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.32 EUR |
| RD3P02BATTL1 |
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Hersteller: Rohm Semiconductor
Trans MOSFET P-CH 100V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 100V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 2.61 EUR |
| 79+ | 2.19 EUR |
| 100+ | 1.96 EUR |