RD3P175SNFRATL ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.08 EUR |
| 5000+ | 1.07 EUR |
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Technische Details RD3P175SNFRATL ROHM Semiconductor
Description: MOSFET N-CH 100V 17.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V.
Weitere Produktangebote RD3P175SNFRATL nach Preis ab 1.41 EUR bis 4.69 EUR
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RD3P175SNFRATL | Rohm Semiconductor |
 Description: MOSFET N-CH 100V 17.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3P175SNFRATL | ROHM - Japan |
Transistor N-Channel MOSFET; 600V; 30V; 105mOhm; 17,5A; 20W; -55°C~150°C; TO-252-3; DPak (2 Leads + Tab); SC-63; RD3P175SNFRATL Rohm Semiconductor TRD3p175snfratl Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| RD3P175SNFRATL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 17.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET N-CH 100V 17.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 2.57 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.41 EUR |
| RD3P175SNFRATL |
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Hersteller: ROHM - Japan
Transistor N-Channel MOSFET; 600V; 30V; 105mOhm; 17,5A; 20W; -55°C~150°C; TO-252-3; DPak (2 Leads + Tab); SC-63; RD3P175SNFRATL Rohm Semiconductor TRD3p175snfratl
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 105mOhm; 17,5A; 20W; -55°C~150°C; TO-252-3; DPak (2 Leads + Tab); SC-63; RD3P175SNFRATL Rohm Semiconductor TRD3p175snfratl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 4.69 EUR |